A carregar...
Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength
An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μ...
Na minha lista:
| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6474141/ https://ncbi.nlm.nih.gov/pubmed/30862111 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9030416 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|