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GeV(n) complexes for silicon-based room-temperature single-atom nanoelectronics
We propose germanium-vacancy complexes (GeV(n)) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6303345/ https://ncbi.nlm.nih.gov/pubmed/30575772 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-36441-w |
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