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Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films
The change in residual stress in PECVD amorphous silicon carbide (a-SiC:H) films exposed to air and wet ambient environments is investigated. A close relationship between stress change and deposition condition is identified from mechanical and chemical characterization of a-SiC:H films. Evidence of...
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| Publicado no: | J Biomed Mater Res B Appl Biomater |
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| Principais autores: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6465170/ https://ncbi.nlm.nih.gov/pubmed/30321479 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/jbm.b.34258 |
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