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Grain boundary resistance to amorphization of nanocrystalline silicon carbide

Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accum...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Chen, Dong, Gao, Fei, Liu, Bo
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4642319/
https://ncbi.nlm.nih.gov/pubmed/26558694
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep16602
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