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Grain boundary resistance to amorphization of nanocrystalline silicon carbide
Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accum...
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| Publicat a: | Sci Rep |
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| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4642319/ https://ncbi.nlm.nih.gov/pubmed/26558694 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep16602 |
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