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GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration pro...
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| Veröffentlicht in: | Sensors (Basel) |
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| Hauptverfasser: | , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2019
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6427264/ https://ncbi.nlm.nih.gov/pubmed/30832229 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s19051051 |
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