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Compensation for Process and Temperature Dependency in a CMOS Image Sensor

This paper analyzes and compensates for process and temperature dependency among a (Complementary Metal Oxide Semiconductor) CMOS image sensor (CIS) array. Both the analysis and compensation are supported with experimental results on the CIS’s dark current, dark signal non-uniformity (DSNU), and con...

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Publicat a:Sensors (Basel)
Autors principals: Xie, Shuang, Theuwissen, Albert
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2019
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6412988/
https://ncbi.nlm.nih.gov/pubmed/30791499
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s19040870
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