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Investigation of direct inkjet-printed versus spin-coated ZrO(2) for sputter IGZO thin film transistor
In this work, a low leakage current ZrO(2) was fabricated for sputter indium gallium zinc oxide (IGZO) thin-film transistor using direct inkjet-printing technology. Spin-coated and direct inkjet-printed ZrO(2) were prepared to investigate the film formation process and electrical performance for dif...
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| 出版年: | Nanoscale Res Lett |
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| 主要な著者: | , , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer US
2019
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6401082/ https://ncbi.nlm.nih.gov/pubmed/30838466 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2905-2 |
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