A carregar...
A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO(2) Gate Insulator TFT with a High Concentration Precursor
Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented t...
Na minha lista:
| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5578338/ https://ncbi.nlm.nih.gov/pubmed/28825652 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10080972 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|