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A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO(2) Gate Insulator TFT with a High Concentration Precursor
Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented t...
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| Опубликовано в: : | Materials (Basel) |
|---|---|
| Главные авторы: | , , , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI
2017
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5578338/ https://ncbi.nlm.nih.gov/pubmed/28825652 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10080972 |
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