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Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,Mn)As compounds, epitaxially grown under either compressive or tensile strain, have been characterized from a perspective of structural and magnetization homogeneity. The quality and composition of th...

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Enregistré dans:
Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Levchenko, K., Prokscha, T., Sadowski, J., Radelytskyi, I., Jakiela, R., Trzyna, M., Andrearczyk, T., Figielski, T., Wosinski, T.
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group UK 2019
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC6399229/
https://ncbi.nlm.nih.gov/pubmed/30833684
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-40309-y
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