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Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,Mn)As compounds, epitaxially grown under either compressive or tensile strain, have been characterized from a perspective of structural and magnetization homogeneity. The quality and composition of th...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Levchenko, K., Prokscha, T., Sadowski, J., Radelytskyi, I., Jakiela, R., Trzyna, M., Andrearczyk, T., Figielski, T., Wosinski, T.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2019
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6399229/
https://ncbi.nlm.nih.gov/pubmed/30833684
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-40309-y
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