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A cryogenic spin-torque memory element with precessional magnetization dynamics
We present a study of precessional magnetization switching in orthogonal spin-torque spin-valve devices at low temperatures. The samples consist of a spin-polarizing layer that is magnetized out-of-the film plane and an in-plane magnetized free and reference magnetic layer separated by non-magnetic...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6349837/ https://ncbi.nlm.nih.gov/pubmed/30692580 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-37204-3 |
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