Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

Nanowire transistors (NWTs) are being considered as possible candidates for replacing FinFETs, especially for CMOS scaling beyond the 5-nm node, due to their better electrostatic integrity. Hence, there is an urgent need to develop reliable simulation methods to provide deeper insight into NWTs’ phy...

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Publicado en:Materials (Basel)
Autores principales: Sadi, Toufik, Medina-Bailon, Cristina, Nedjalkov, Mihail, Lee, Jaehyun, Badami, Oves, Berrada, Salim, Carrillo-Nunez, Hamilton, Georgiev, Vihar, Selberherr, Siegfried, Asenov, Asen
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI 2019
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Article
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC6337633/
https://ncbi.nlm.nih.gov/pubmed/30609720
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12010124
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