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Variability Predictions for the Next Technology Generations of n-type Si(x)Ge(1−x) Nanowire MOSFETs
Using a state-of-the-art quantum transport simulator based on the effective mass approximation, we have thoroughly studied the impact of variability on [Formula: see text] channel gate-all-around nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) associated with random discrete dop...
Gardado en:
| Publicado en: | Micromachines (Basel) |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2018
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6316762/ https://ncbi.nlm.nih.gov/pubmed/30563045 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9120643 |
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