Disorder induced power-law gaps in an insulator–metal Mott transition

A correlated material in the vicinity of an insulator–metal transition (IMT) exhibits rich phenomenology and a variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogenei...

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Dades bibliogràfiques
Publicat a:Proc Natl Acad Sci U S A
Autors principals: Wang, Zhenyu, Okada, Yoshinori, O’Neal, Jared, Zhou, Wenwen, Walkup, Daniel, Dhital, Chetan, Hogan, Tom, Clancy, Patrick, Kim, Young-June, Hu, Y. F., Santos, Luiz H., Wilson, Stephen D., Trivedi, Nandini, Madhavan, Vidya
Format: Artigo
Idioma:Inglês
Publicat: National Academy of Sciences 2018
Matèries:
Physical Sciences
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6217382/
https://ncbi.nlm.nih.gov/pubmed/30322914
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1808056115
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