Ferroelectric control of a Mott insulator

The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite hete...

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Detalhes bibliográficos
Main Authors: Yamada, Hiroyuki, Marinova, Maya, Altuntas, Philippe, Crassous, Arnaud, Bégon-Lours, Laura, Fusil, Stéphane, Jacquet, Eric, Garcia, Vincent, Bouzehouane, Karim, Gloter, Alexandre, Villegas, Javier E., Barthélémy, Agnès, Bibes, Manuel
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2013
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3789157/
https://ncbi.nlm.nih.gov/pubmed/24089020
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02834
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