Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleratio...

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Bibliographic Details
Published in:Micromachines (Basel)
Main Authors: Hu, Xiaodong, Mackowiak, Piotr, Bäuscher, Manuel, Ehrmann, Oswin, Lang, Klaus-Dieter, Schneider-Ramelow, Martin, Linke, Stefan, Ngo, Ha-Duong
Format: Artigo
Language:Inglês
Published: MDPI 2018
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Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC6187311/
https://ncbi.nlm.nih.gov/pubmed/30424199
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9060266
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