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Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleratio...
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| Foilsithe in: | Micromachines (Basel) |
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| Main Authors: | , , , , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
MDPI
2018
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6187311/ https://ncbi.nlm.nih.gov/pubmed/30424199 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9060266 |
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