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A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems
In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the contac...
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| Pubblicato in: | Micromachines (Basel) |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2016
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6190469/ https://ncbi.nlm.nih.gov/pubmed/30404366 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi7100193 |
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