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Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application
In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleratio...
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| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6187311/ https://ncbi.nlm.nih.gov/pubmed/30424199 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi9060266 |
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