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Effect of Bilayer CeO(2−x)/ZnO and ZnO/CeO(2−x) Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory
Memory devices with bilayer CeO(2−x)/ZnO and ZnO/CeO(2−x) heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heteros...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2018
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6181829/ https://ncbi.nlm.nih.gov/pubmed/30311009 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2738-4 |
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