A carregar...
Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors
Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demonstrated a simple electrochemical etching (ECE) process that can create layered porous GaN structures to form distributed Bragg reflectors for visible light at wafer scale. Here, we apply the same ECE...
Na minha lista:
| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6163959/ https://ncbi.nlm.nih.gov/pubmed/30134525 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11091487 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|