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Tuning electronic properties of transition-metal dichalcogenides via defect charge
Defect engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide (TMD) materials. Here, we demonstrate that the electronic structure of MoS(2) depends sensitively on the defect charge, both its sign and magnitude. In particular, we study...
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| Publicat a: | Sci Rep |
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| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6134151/ https://ncbi.nlm.nih.gov/pubmed/30206260 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-31941-1 |
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