Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine...

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Detalhes bibliográficos
Publicado no:Sci Adv
Main Authors: Park, Jun Hong, Sanne, Atresh, Guo, Yuzheng, Amani, Matin, Zhang, Kehao, Movva, Hema C. P., Robinson, Joshua A., Javey, Ali, Robertson, John, Banerjee, Sanjay K., Kummel, Andrew C.
Formato: Artigo
Idioma:Inglês
Publicado em: American Association for the Advancement of Science 2017
Assuntos:
Research Articles
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5650486/
https://ncbi.nlm.nih.gov/pubmed/29062892
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.1701661
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