Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine...

詳細記述

保存先:
書誌詳細
出版年:Sci Adv
主要な著者: Park, Jun Hong, Sanne, Atresh, Guo, Yuzheng, Amani, Matin, Zhang, Kehao, Movva, Hema C. P., Robinson, Joshua A., Javey, Ali, Robertson, John, Banerjee, Sanjay K., Kummel, Andrew C.
フォーマット: Artigo
言語:Inglês
出版事項: American Association for the Advancement of Science 2017
主題:
Research Articles
オンライン･アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC5650486/
https://ncbi.nlm.nih.gov/pubmed/29062892
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.1701661
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