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Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiO(x) Passivation Layer
In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposit...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6119873/ https://ncbi.nlm.nih.gov/pubmed/30111704 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11081440 |
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