Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiO(x) Passivation Layer

In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposit...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Main Authors: Liu, Xianzhe, Wu, Weijing, Chen, Weifeng, Ning, Honglong, Zhang, Xiaochen, Yuan, Weijian, Xiong, Mei, Wang, Xiaofeng, Yao, Rihui, Peng, Junbiao
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2018
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6119873/
https://ncbi.nlm.nih.gov/pubmed/30111704
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11081440
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