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Perpendicular Magnetic Anisotropy and Hydrogenation-Induced Magnetic Change of Ta/Pd/CoFeMnSi/MgO/Pd Multilayers

The perpendicular magnetic anisotropy (PMA) has been achieved in Ta/Pd/CoFeMnSi (CFMS)/MgO/Pd film, in which the Heusler compound CoFeMnSi is one of the most promising candidates for spin gapless semiconductor (SGS). The strong PMA, with the effective anisotropy constant K(eff) of 5.6 × 10(5) erg/cm...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Zhang, Qing, Fu, Huarui, You, Caiyin, Ma, Li, Tian, Na
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6060204/
https://ncbi.nlm.nih.gov/pubmed/30047015
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2628-9
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