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Perpendicular Magnetic Anisotropy and Hydrogenation-Induced Magnetic Change of Ta/Pd/CoFeMnSi/MgO/Pd Multilayers
The perpendicular magnetic anisotropy (PMA) has been achieved in Ta/Pd/CoFeMnSi (CFMS)/MgO/Pd film, in which the Heusler compound CoFeMnSi is one of the most promising candidates for spin gapless semiconductor (SGS). The strong PMA, with the effective anisotropy constant K(eff) of 5.6 × 10(5) erg/cm...
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| Publicado en: | Nanoscale Res Lett |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer US
2018
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6060204/ https://ncbi.nlm.nih.gov/pubmed/30047015 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2628-9 |
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