A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In(2)O(3) thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Kyndiah, Adrica, Ablat, Abduleziz, Guyot-Reeb, Seymour, Schultz, Thorsten, Zu, Fengshuo, Koch, Norbert, Amsalem, Patrick, Chiodini, Stefano, Yilmaz Alic, Tugbahan, Topal, Yasemin, Kus, Mahmut, Hirsch, Lionel, Fasquel, Sophie, Abbas, Mamatimin
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6053378/
https://ncbi.nlm.nih.gov/pubmed/30026501
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-29220-0
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