Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers

Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance...

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Dettagli Bibliografici
Pubblicato in:Materials (Basel)
Autori principali: Yao, Xiannian, Duan, Qingqing, Tong, Junwei, Chang, Yufang, Zhou, Lianqun, Qin, Gaowu, Zhang, Xianmin
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI 2018
Soggetti:
Review
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5978098/
https://ncbi.nlm.nih.gov/pubmed/29751514
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11050721
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