Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers

Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance...

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Gardado en:
Detalles Bibliográficos
Publicado en:Materials (Basel)
Main Authors: Yao, Xiannian, Duan, Qingqing, Tong, Junwei, Chang, Yufang, Zhou, Lianqun, Qin, Gaowu, Zhang, Xianmin
Formato: Artigo
Idioma:Inglês
Publicado: MDPI 2018
Assuntos:
Review
Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC5978098/
https://ncbi.nlm.nih.gov/pubmed/29751514
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11050721
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