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Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors
Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. Ohmic contact with a good device performance was...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2018
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5977307/ https://ncbi.nlm.nih.gov/pubmed/29724041 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8050293 |
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