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High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity
Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility transistors (HEMT) was used to demonstrate a whole new methodology for ion-selective FET sensors, which can create ultra-high sensitivity (−36 mV/log [Pb(2+)]) surpassing the limit of ideal sensitivity (−29.58 mV/log [Pb(2+...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5974191/ https://ncbi.nlm.nih.gov/pubmed/29844607 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-26792-9 |
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