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Indirect excitons in van der Waals heterostructures at room temperature
Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we...
Gorde:
| Argitaratua izan da: | Nat Commun |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group UK
2018
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5951911/ https://ncbi.nlm.nih.gov/pubmed/29760404 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-018-04293-7 |
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