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Indirect excitons in van der Waals heterostructures at room temperature
Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5951911/ https://ncbi.nlm.nih.gov/pubmed/29760404 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-018-04293-7 |
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