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Subsurface Damage in Polishing Process of Silicon Carbide Ceramic

Subsurface damage (SSD) in the polishing process of silicon carbide (SiC) ceramic presents one of the most significant challenges for practical applications. In this study, the theoretical models of SSD depth are established on the basis of the material removal mechanism and indentation fracture mec...

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Détails bibliographiques
Publié dans:Materials (Basel)
Auteurs principaux: Gu, Yan, Zhu, Wenhui, Lin, Jieqiong, Lu, Mingming, Kang, Mingshuo
Format: Artigo
Langue:Inglês
Publié: MDPI 2018
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5951352/
https://ncbi.nlm.nih.gov/pubmed/29584694
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11040506
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