Mechanism of action and process for graphene oxide in electrochemical mechanical polishing of silicon carbide

Electrochemical mechanical polishing （ECMP） technology is a new technology that can rapidly improve the efficiency of flattening silicon carbide （SiC）. Based on the complexity of formulating the polishing solution and the inability to combine efficient material removal and high surface quality at th...

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Главные авторы: PENG Chao, REN Ronghao, WANG Zirui, WANG Yongguang, HUANG Dongmei, ZHU Rui, CHENG Feng
Формат: Artigo
Язык:Chinês
Опубликовано: Journal of Materials Engineering 2025-08-01
Серии:Cailiao gongcheng
Предметы:
silicon carbide
electrochemical mechanical polishing
lubrication
graphene oxide
Online-ссылка:https://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2023.000441
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