Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I(DS) modulatio...

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Vydáno v:Sci Rep
Hlavní autoři: Kanaki, Toshiki, Yamasaki, Hiroki, Koyama, Tomohiro, Chiba, Daichi, Ohya, Shinobu, Tanaka, Masaaki
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group UK 2018
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5940878/
https://ncbi.nlm.nih.gov/pubmed/29739954
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-24958-z
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