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Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Lee, Kyung Jae, Lee, Sangyeop, Bac, Seul-Ki, Choi, Seonghoon, Lee, Hakjoon, Chang, Jihoon, Choi, Suho, Chongthanaphisut, Phunvira, Lee, Sanghoon, Liu, X., Dobrowolska, M., Furdyna, J. K.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5797254/
https://ncbi.nlm.nih.gov/pubmed/29396557
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-20749-8
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