Effects of N(2) Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy

GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N(2) working gas with a small amount of...

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Detaylı Bibliyografya
Yayımlandı:Nanomaterials (Basel)
Asıl Yazarlar: Junaid, Muhammad, Hsiao, Ching-Lien, Chen, Yen-Ting, Lu, Jun, Palisaitis, Justinas, Persson, Per Ola Åke, Hultman, Lars, Birch, Jens
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI 2018
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC5923553/
https://ncbi.nlm.nih.gov/pubmed/29642435
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8040223
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