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Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors
Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO(x) interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5841428/ https://ncbi.nlm.nih.gov/pubmed/29515163 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-22602-4 |
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