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High-Temperature Raman Spectroscopy of Nano-Crystalline Carbon in Silicon Oxycarbide
The microstructure of segregated carbon in silicon oxycarbide (SiOC), hot-pressed at T = 1600 °C and p = 50 MPa, has been investigated by VIS Raman spectroscopy (λ = 514 nm) within the temperature range 25–1000 °C in air. The occurrence of the G, D’ and D bands at 1590, 1620 and 1350 cm(−1), togethe...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5793591/ https://ncbi.nlm.nih.gov/pubmed/29315211 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11010093 |
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