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Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferro...
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| Publicado en: | Nano Converg |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer Singapore
2018
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5787217/ https://ncbi.nlm.nih.gov/pubmed/29399434 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s40580-018-0135-4 |
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