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Stateful characterization of resistive switching TiO(2) with electron beam induced currents
Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as...
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| Publicado no: | Nat Commun |
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| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5719452/ https://ncbi.nlm.nih.gov/pubmed/29215006 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-02116-9 |
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