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Changes of the absorption cross section of Si nanocrystals with temperature and distance

The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under mo...

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Detalles Bibliográficos
Publicado en:Beilstein J Nanotechnol
Main Authors: Greben, Michael, Khoroshyy, Petro, Gutsch, Sebastian, Hiller, Daniel, Zacharias, Margit, Valenta, Jan
Formato: Artigo
Idioma:Inglês
Publicado: Beilstein-Institut 2017
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Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC5687048/
https://ncbi.nlm.nih.gov/pubmed/29181288
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.8.231
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