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Changes of the absorption cross section of Si nanocrystals with temperature and distance
The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under mo...
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| Publicado no: | Beilstein J Nanotechnol |
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| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Beilstein-Institut
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5687048/ https://ncbi.nlm.nih.gov/pubmed/29181288 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.8.231 |
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