Spatially Resolved Thermometry of Resistive Memory Devices

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microsc...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Sci Rep
Hlavní autoři: Yalon, Eilam, Deshmukh, Sanchit, Muñoz Rojo, Miguel, Lian, Feifei, Neumann, Christopher M., Xiong, Feng, Pop, Eric
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group UK 2017
Témata:
Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5681698/
https://ncbi.nlm.nih.gov/pubmed/29127371
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-14498-3
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky