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Band Gap Engineering of Hexagonal SnSe(2) Nanostructured Thin Films for Infra-Red Photodetection
We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe(2) nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ~1.2 eV simil...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5680184/ https://ncbi.nlm.nih.gov/pubmed/29123219 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-15519-x |
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