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Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition

[Image: see text] Pulsed UV laser deposition was exploited for the preparation of thin Sn(50–x)As(x)Se(50) (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition m...

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Bibliographic Details
Published in:ACS Omega
Main Authors: Prokeš, Lubomír, Gorylová, Magdaléna, Čermák Šraitrová, Kateřina, Nazabal, Virginie, Havel, Josef, Němec, Petr
Format: Artigo
Language:Inglês
Published: American Chemical Society 2021
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC8280661/
https://ncbi.nlm.nih.gov/pubmed/34278134
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.1c01892
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