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Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition
[Image: see text] Pulsed UV laser deposition was exploited for the preparation of thin Sn(50–x)As(x)Se(50) (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition m...
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| Publicado no: | ACS Omega |
|---|---|
| Principais autores: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American
Chemical Society
2021
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8280661/ https://ncbi.nlm.nih.gov/pubmed/34278134 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.1c01892 |
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