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An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)...
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| Publicat a: | Nanomaterials (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5666451/ https://ncbi.nlm.nih.gov/pubmed/28937619 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7100286 |
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