A carregar...
An Al(2)O(3) Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials
We fabricated 70 nm Al(2)O(3) gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al(2)O(3)/Si substrate is superior to that on a traditional 300 nm SiO(2)...
Na minha lista:
| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5666451/ https://ncbi.nlm.nih.gov/pubmed/28937619 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7100286 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|